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A422A

Charge Sensitive Preamplifier with Timing (Box)

Datasheet

Home Modular Pulse Processing ElectronicsPreamplifiersPreamplifiers - Charge Sensitive A422A

Photo of A422A
  • Positive or negative input signals

  • Energy sensitivity range of 5, 30 or 60 mV/MeV (Si)

  • Low noise

  • Timing output

  • Up to 5 kV (positive or negative) detector bias voltage

The CAEN Mod. A422A is a charge sensitive preamplifier, designed to be used especially with semiconductor detectors and in particular whenever the charge division is required (as in position sensitive silicon detectors). The unit accepts both positive and negative input pulses. A Test input for detector gain calibration and a HV input (up to 5 kV) for the detector bias are also included.

The output is an inverting unipolar voltage pulse, proportional in amplitude to the integrated charge; decay time is 300 µs. A Timing output provides an unipolar inverting fast voltage pulse, with a 15 ns typical rise time, across a 50 Ω load. Three different sensitivities (5, 30 or 60 mV/MeV) can be selected.


Ordering Options

Code Description
WA422AXAAAAA

A422A – Charge Sensitive Preamplifier with timing(Box)

RoHS

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    Image
    Name
    Package
    Out Conn.
    In Conn.
    Test Capac. (pF)
    Max Detector Bias Voltage (V)
    Integral Non-linearity
    Output Linear Range (V)
    Output Rise Time (ns)
    Noise FWHM keV (Si)
    Sensitivity (mV/MeV) (Si)
    No. Of Channels
    A1422H

    A1422H

    15 Pin SIP hybrid

    -

    -

    1 / 10 / 47

    ±800

    < ± 0.05% (0 ÷ ±10 V 1 kΩ term.)

    ±10 (1 kΩ term.) ±4.5 (50 Ω term.)

    < 5/10/70 @0pF <20/25/45 @390pF

    < 2.2/4.7 @0pF <5.8/10.5 @390pF

    1/5/45/90/<br>400/450

    1

    A1422C/D

    A1422C/D

    Shielded box

    RJ-45

    SHV

    1 / 10

    ± 2000

    <± 0.05%<br>(0 ÷ ±10V 1 kΩ term.)

    ±5 (1 kΩ term.)<br>±2.5 (100Ω term.)

    < 5 @0pF<br><15 @200pF

    < 4.7 @0pF<br>< 7.6 @200pF

    5

    8

    A1422

    A1422

    Shielded box

    LEMO or BNC

    SHV

    1/10/47

    ±2000

    < ± 0.05% <br>(0 ÷ ±10V 1kΩ term.)

    ±10 (1kΩ term.)<br>±4.5 (50Ω term.)

    <5/10/70 @0pF<br><10/20/25/45 @390pF

    <2.2/4.7 @0pF<br><5.5/5.8/10.5/36 @390pF

    1/5/45/90/<br>400/450

    1/4/8

    A1429

    A1429

    Shielded box

    Header (17+17)

    Samtec 80-pin 0.8mm

    0.5 / 1 / 2.2

    ±400 V Max

    N.A.

    Differential ± 4.5 VDiff max on 100Ω Term

    <20ns @0 pF<br><60ns @200 pF

    <5 KeV @0 pF<br><35 eV/pF

    20/45/90/<br>200/400

    64

    A1422E/F

    A1422E/F

    Shielded box

    SMA

    SMA

    1

    ±750

    <±0.05%<br>(0 ÷ ±10V 1kΩ term.)

    ±10 (1 kΩ term.)<br>±4.5 (50 Ω term.)

    <5.4 @0pF<br><60 @330pF

    <2.8 @0pF<br><6.8 @330pF

    200

    2/4

    A1442

    A1442

    Shielded box

    Header (17+17)

    D-SUB 25

    N.A.

    ±400

    N.A.

    Differential ±4.5 Vdiff

    < 10 @0pF<br /><20 @200pF

    <5 @0pF<br><9.5 @200pF

    20 / 100 <br>Selectable

    16/32

    A422
    Discontinued

    A422

    14 pin SIP hybrid

    -

    -

    10

    ±1000

    <0.05%

    ± 8 ± 4

    <20

    <9.8 @470pF

    1/45/90

    1

    A422A

    A422A

    Shielded box

    BNC

    SHV

    10

    ±5000

    < 0.045%

    ± 8 ± 4

    < 50

    <17.5 @1nF

    5/30/60

    1

    Image
    Name
    FORM FACTOR
    NO. OF CHANNELS
    DESCRIPTION
    SENSITIVITY
    COMPATIBLE DETECTORS
    A1422H

    A1422H

    Single in-line package

    1

    Low Noise Fast Rise Time Charge Sensitive Preamplifiers (SIP)

    1/5/45/90/400/450<br>mV/MeV (Si)

    Silicon (Si)

    A1424

    A1424

    Desktop

    1

    Fast Charge Sensitive Preamplifier

    3.6 mV/fC

    Diamond

    A1422C/D

    A1422C/D

    Desktop

    8

    Low Noise Fast Rise Time Charge Sensitive Preamplifier

    5 (mV/MeV) (Si)

    He3 / BF3 Tubes

    A1422

    A1422

    Desktop

    1 / 4 / 8

    Low Noise Fast Rise Time Charge Sensitive Preamplifiers

    1/5/45/90/400/450<br>mV/MeV (Si)

    He3 / BF3 Tubes<br>Proportional Counters<br>Ionization Chambers<br>Segmented Silicon <br>Silicon (Si)

    A1429

    A1429

    Desktop

    64

    Charge Sensitive Preamplifier

    20/45/90/200/400<br>mV/MeV (Si)

    GEM Segmented Silicon

    A1427

    A1427

    Desktop

    1

    Low Noise Fast Current Neutron Flux Preamplifier

    FC: 700÷2500<br>(Trimmer adjustable)<br>PR: 500÷1500<br>(Trimmer adjustable)

    Fission Chambers<br>Proton Recoil

    A1422E/F

    A1422E/F

    Desktop

    2 / 4

    Low Noise Fast Rise Time Charge Sensitive Preamplifiers

    200 mV/MeV (Si)

    Silicon (Si)

    A1442

    A1442

    Desktop

    16 / 32

    Charge Sensitive Preamplifier

    Selectable 20/100<br>mV/MeV (Si)

    GEM Segmented Silicon

    A1421
    New

    A1421

    Desktop

    1

    Preamplifier and Discriminator for 3He tubes

    30 mV/fC on HiZ<br>(15 mV/fC on 50 Ω)

    He3 / BF3 Tubes

    R1443

    R1443

    19” rack unit

    32 / 64

    Preamplifier Unit for 3He tubes

    2.25 V/pC

    He3 / BF3 Tubes

    A1423B

    A1423B

    Desktop

    1

    Wideband Preamplifier

    Selectable From<br>+18 dB to +54 dB

    Diamond PMT<br>Scintillators<br>SiPM / MPPC

    A1426 CARDARELLI

    A1426 CARDARELLI

    Desktop

    1

    Matched Charge Preamplifier

    Up to 5 mV/fC

    Diamond

    A1436 / A1436A

    A1436 / A1436A

    Desktop

    1 / 8

    Differential Input Low Noise Transimpedance Amplifiers

    Programmable<br>10<sup>9</sup>/10<sup>8</sup>/10<sup>7</sup>/10<sup>6</sup>/10<sup>5</sup>/10<sup>4</sup>/10<sup>3</sup><br>(V/A), 10<sup>9</sup> V/A (A1436 only)

    Diamond PMT / Scintillators<br>Silicon (Si)

    A1425

    A1425

    Desktop

    1

    Fast Charge Sensitive Preamplifier

    3.6 mV/fC

    Diamond

    A422A

    A422A

    Desktop

    1

    Charge Sensitive Preamplifier with Timing

    5/30/60 mV/MeV (Si)

    Proportional Counters<br>Ionization Chambers<br>Silicon (Si)

    Technical Specifications

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    Packaging

    Alloy box: 100 mm x 50 mm x 50 mm

    Input Signals (IN/DETECTOR)

    SHV; accepts positive and negative charge pulses from semiconductor detectors and supplies the HV bias to the detector itself.

    * Output tested by using an input pulse with 50 ns rise time and a 1000 µs fall time.

    Input Signals (HV)

    SHV; up to 5 kV (positive or negative) for the detector bias. 101 MΩ resistance in series

    Input Signals (TEST)

    LEMO 00; positive or negative inputs to calibrate the gain of the detector input via Ctest = 10 pF

    Output Signals (OUT/ENERGY)

    BNC; inverting unipolar voltage pulse proportional in peak amplitude to the charge input. DC offset adjustable to zero via the internal R12 trimmer. 50 ns minimum rise time, 300 μs decay time, ±8 V max. peak amplitude

    Output Signals (TIMING)

    BNC; inverting unipolar fast voltage pulse. 14 ns minimum rise time. Requires a 50 Ω termination whether it is used or not.

    Integral non linearity

    ± 0.045% (from 0 to ± 8 V peak output)

    Gain drift

    < ± 50 ppm/°C to (from 0° to 50°C)

    Energy sensitivity

    60/30/5 mV/MeV (Si) selectable via internal jumpers (± 10%)

    Typical noise

    17.5 KeV FWHM at 1000 pF capacitance and 60 mV/MeV sensitivity

    Power Requirements

    • +12 V: 15 mA
    • -12 V: 15 mA
    • +24 V: 30 mA
    • -24 V: 5 mA

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